(Lecture, Jul 13) Interface Engineering for 2D Phosphorene Based Optoelectronic Devices
2017-07-06 readCount:269
Title: Interface Engineering for 2D Phosphorene Based Optoelectronic Devices
Speaker: Prof. Chen Wei (National University of Singapore)
Venue: Room 502, State Key Laboratory Of Luminescent Materials And Devices, Wushan Campus
Time: Thursday, Jul 13, 2017, 10:00
Black phosphorus (BP), as a fast-emerging two-dimensional (2D) material, stands out from other members in 2D family such as graphene and transition metal dichalcogenides (TMDs), and attracts substantial research interests attributed to its remarkably unique fundamental properties and versatile device applications. In this talk, I will summarize and discuss our recent work for interface engineered 2D materials phosphorene based field-effect-transistors (FETs) and photo-transistors, through the combination of in-situ FET device evaluation and photoelectron spectroscopy investigation. We will particularly emphasize on the electron and hole doping effect on the transport properties and optoelectronic response of phosphorene devices.
Dr. Chen Wei is currently an Associate Professor (2013 - ) in both Chemistry Department and Physics Department at National University of Singapore (NUS). He received his Bachelor’s degree in Chemistry from Nanjing University (China) in 2001, and Ph.D. degree from Chemistry Department at NUS in 2004 under the supervision of Prof Loh Kian Ping and Prof Andrew T. S. Wee. His current research interests include Molecular-scale Interface Engineering for Molecular, Organic and 2D Materials-based Electronics, and Interface-Controlled Nanocatalysis for Energy and Environmental Research.

Announced by School of Materials Science and Engineering